Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Turn Off Delay Time  

110 ns

Power Dissipation (Max)  

380W Tc

Number of Elements  

1

Published  

2008

Series  

HEXFET®

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

2.4MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

380W

Case Connection  

DRAIN

Turn On Delay Time  

66 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.4m Ω @ 165A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

11210pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

140nC @ 4.5V

Rise Time  

220ns

Vgs (Max)  

±16V

Fall Time (Typ)  

110 ns

Continuous Drain Current (ID)  

270A

Threshold Voltage  

2.5V

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

60V

Dual Supply Voltage  

60V

Avalanche Energy Rating (Eas)  

290 mJ

Nominal Vgs  

2.5 V

Height  

4.83mm

Length  

10.67mm

Width  

9.65mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free